The role of fluence in determining the response of thin molybdenum films to ultrashort laser irradiation; from laser-induced crystallization to ablation via photomechanical ablation and nanostructure formation

The selective processing of Mo at low temperatures is challenging, especially in advanced manufacturing on flexible and heat-sensitive substrate due to its higher melting temperature. key role fluence determining the response thin films ultrashort laser irradiation considered this study. At fluences, electrical properties are enhanced by a localized laser-induced crystallization mechanism; mobility increased contact resistance between Mo-Si interface reduced. patterning proceeds without impacting Si layer threshold for ablation increases with film thickness Mo. Two dependent mechanisms observed depending thickness. For thicknesses 20 nm 40 nm, only photothermal interaction. 60 80 thick films, both photomechanical interactions two-separate regimes, respectively. Interestingly, these two non-ablative nanostructuring regime occurs. study provides concise overview process window implementing modifications layers minimal impact using single wavelength pulse laser.